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 PRELIMINARY
1.28 Gbit SDRAM
ELECTRONICS
3DSD1280-323H
1.28 GBit Synchronous DRAM - Hermetic package
Features Organized as 40M x 32-bit. Single +3.3V 0.3V power supply Two stacks of ten 64 MBit SDRAM mounted on ceramic hermetic package Fully synchronous; all signals registered on positive edge of system clock. Internal pipelined operation; column address can be changed every clock cycle. Programmable burst lengths: 1, 2, 4, 8 or full page. Auto Precharge, includes Concurrent Auto Precharge, and Auto Refresh Modes. Self Refresh Mode LVTTL - compatible inputs and outputs Vcc and Vss are decoupled with four 10nF and four 100nF capacitors inside the module MIL-STD-883D Class S screening temperature range : -15C to +80
Pin configuration for 3DSD1024-0863S
GND NC/A12* DQM BS1 BS0 A11 A10 A9 A8 GND NC Vcc A7 A6 A1 A0 Vcc
A0-A12*
64 63
General Description The 3DSD1280-323H is a highly integrated Synchronous Dynamic Random Access Memory ceramic module, containing 1,342,177,280 bits. It is organized with ten banks of 128 Mbit. Each Bank has a 32-bit interface, and is selected with specific CS#. All other signals are common to the twenty 64 MBit SDRAM memories. It is particularly well suited for use in high performance and high density aerospace applications, such as solid state recorder for airbornes and satellites. The 3DSD1280-323H is packaged in a 84-pin CQFJ.
Pin Description
DQ0-DQ31 Data Inputs/Outputs Address Column Address Select Row Address Select Write Enable Chip Select Bank Address Input Clock Clock Enable Input/Output Mask Power (+3.3v) Ground No Connection
A5 A4 A3 A2
84 1
CAS# RAS# WE# CS0# - CS9# BS0,BS1 CLK CKE DQM Vcc GND NC
Vcc DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 Vcc NC GND DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 GND
21
TOP VIEW
GND DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 GND NC Vcc DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 Vcc
43
Block Diagram
VCC CLK RAS CAS WE DQ[0...15] A[0...12]
Vcc NC CLK WE# CAS#
CS6# CS5# CS4# CS3# CS2# CS1# CS0# CKE GND
22
RAS# CS9# CS8# CS7# Vcc NC GND
42
* : A12 is a provision for 256Mb components extension
CLK RAS CAS WE CS[0...9] CKE UDQM LDQM
VCC DQ[0...15] A[0...11] BSO BS1 A12/NC GND
VCC CLK DQ[0...15] RAS CAS A[0...11] WE BSO CS[0...9] BS1 CKE A12/NC UDQM LDQM GND
BSO BS1 CS[0...9] CKE DQM
GND
3D PLUS, 641 rue Helene Boucher - ZI F-78532 BUC Cedex FRANCE Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89 Web : http://www. 3d-plus.com
3DFP-0008 Rev : 2 December 1999 Page 1/2
1.28 Gbit SDRAM
ELECTRONICS
3DSD1280-323H
A e b
A B b Dimensions (mm) 34.29 0.25 33.02 0.50 0.432 typ. 0.762 ref. 18.35 0.35 1.27
A
r h e
ABSOLUTE MAXIMUM RATINGS
(Stressed greater than those listed may cause permanent damage to the device)
Parameter Power Supply Voltage Power Supply Voltage for Output Input Voltage Output Voltage Storage temperature Short Circuit Output Current Symbol Vcc Vccq Vin Vout Tstg Iout Rating - 0.3 to +4.6 - 0.3 to +4.6 - 0.3 to Vcc+0.3 - 0.3 to Vcc+0.3 - 55 to +150 TBD Units V V V V C mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to GND, Ta = -15C to +80C)
Parameter Power Supply Voltage Input High Voltage Input Low Voltage Operating Temperature Operating with one bank oper-ation Standby in power down mode Operating (burst) Symbol Vcc, VccQ VIH VIL Tope ICC1 ICC2 ICC3 Min 3.0 2.0 -0.3 -15 Typ 3.3 Max 3.6 Vcc+0.3 0.8 +80 300 20 300 Units V V V C mA mA mA
TEST TOOLS PRODUCT MARKING
- 3D PLUS Logo - Part Number - Date Code (ww,yy) - Serial Number on request
3DSD1280-323H/PROTO 3DSD1280-323H/883D-S CQFJ 84 - prototype ( 0C to +70C ) CQFJ 84 - MIL STD 883D - Class S ( -15C to +80C )
PN : 3DSD1280-323H /883D-S DC : 2599
3DSD1280-323H
Support YAMAICHI IC51-1004-405-1
ORDERING INFORMATION
MAIN SALES OFFICE
France 3D PLUS Tel : 33 (0)1 30 83 26 50 Fax : 33 (0)1 39 56 25 89 e-mail : sales@3d-plus.com
DISTRIBUTOR
3D PLUS S.A. reserves the right to change or cancel products or specifications without notice. C 3D PLUS, 1999 3D PLUS, 641 rue Helene Boucher - ZI F-78532 BUC Cedex FRANCE Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89 Web : http://www. 3d-plus.com 3DFP-0008 Rev : 2 December 1999 Page 2/2


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